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The surface transient in Si for SIMS with oblique low-energy O2+ beams

โœ Scribed by Jiang, Z. X.; Alkemade, P. F. A.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
148 KB
Volume
27
Category
Article
ISSN
0142-2421

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โœฆ Synopsis


z tr etration depth of the primary ions.

In addition, the thickness of the native oxide of Si wafers was measured as a function of the storage time in air. It varied from 0.6 nm after 1 day to 1.5 nm after 2 years.


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