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Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

✍ Scribed by Z.X. Jiang; K. Kim; J. Lerma; A. Corbett; D. Sieloff; M. Kottke; R. Gregory; S. Schauer

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
113 KB
Volume
252
Category
Article
ISSN
0169-4332

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z tr etration depth of the primary ions. In addition, the thickness of the native oxide of Si wafers was measured as a function of the storage time in air. It varied from 0.6 nm after 1 day to 1.5 nm after 2 years.

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The Ge concentration in MBE-grown SiGe quantum wells can be quantitatively and non-destructively analyzed by means of low energy Rutherford backscattering (RBS), even for a 10 nm thick quantum well at a depth of about 60 nm below the surface. From the raw data quantitative information can be deduced