Limitations to quantitative analysis of
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M. Draxler; S.N. Markin; P. Bauer
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Article
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2006
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Elsevier Science
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English
⚖ 179 KB
The Ge concentration in MBE-grown SiGe quantum wells can be quantitatively and non-destructively analyzed by means of low energy Rutherford backscattering (RBS), even for a 10 nm thick quantum well at a depth of about 60 nm below the surface. From the raw data quantitative information can be deduced