SIMS depth profiling of TiOxNy films
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Metson, J. B.; Prince, K. E.
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Article
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1999
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John Wiley and Sons
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English
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Amorphous TiO x N y films of varying stoichiometry have been deposited on Si and Cu substrates using ionassisted deposition (IAD). The structure of the films and the effects of annealing in the 200-450 ยฐC range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate