Depth proΓling using secondary ion mass spectrometry of a 100 keV Na implant in a 430 nm thick Γlm has SiO 2 been studied as a function of temperature from 295 to 93 K. At 295 K, and using a coincident electron Γux to reduce the extent of electric Γeld-induced Na migration, accumulation of Na at the
Oxygen flooding and sample cooling during depth profiling of HfSiON thin films
β Scribed by Shiro Miwa
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 558 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The influence of Ar pressure on depth resolution during glow discharge optical emission spectroscopy (GDOES) depth profiling has been examined through the use of 358 nm thick anodic alumina films grown over flat aluminium surfaces. The films are ideal standards for the present purpose, being amorpho
Degradation of depth resolution during glow discharge optical emission spectroscopy (GDOES) depth profiling analysis of thin films, formed on relatively rough substrates, has been investigated using preconditioned aluminium substrates of controlled surface roughness. The anodic alumina films, ~120 n