✦ LIBER ✦

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

✍ Scribed by Yi Zhou; Dake Wang; Claude Ahyi; Chin-Che Tin; John Williams; Minseo Park; N. Mark Williams; Andrew Hanser

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Simulation of the electrical characteris

✍ Shelton, B.S.; Ting Gang Zhu; Lambert, D.J.H.; Dupuis, R.D. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 102 KB

1.4-kV Breakdown Voltage for AlGaN/GaN H

✍ Selvaraj, Susai Lawrence; Watanabe, Arata; Wakejima, Akio; Egawa, Takashi 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 415 KB

A new low-loss lateral trench sidewall S

✍ Jagadesh Kumar, M.; Singh, Y. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 260 KB

AlGaN/GaN HEMTs on Silicon With Hybrid S

✍ Yi-Wei Lian; Yu-Syuan Lin; Hou-Cheng Lu; Yen-Chieh Huang; Hsu, S.S.H. 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 367 KB

Numerical Analysis of Forward-Current/Vo

✍ Mochizuki, K.; Mishima, T.; Terano, A.; Kaneda, N.; Ishigaki, T.; Tsuchiya, T. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 650 KB

High breakdown Voltage undoped AlGaN-GaN

✍ Saito, W.; Kuraguchi, M.; Takada, Y.; Tsuda, K.; Omura, I.; Ogura, T. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 623 KB