Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates

✍ Scribed by Mochizuki, K.; Mishima, T.; Terano, A.; Kaneda, N.; Ishigaki, T.; Tsuchiya, T.

• Book ID: 114620501
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 650 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2145380