Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN Diodes Formed on GaN Free-Standing Substrates

✍ Scribed by Mochizuki, K.; Nomoto, K.; Hatakeyama, Y.; Katayose, H.; Mishima, T.; Kaneda, N.; Tsuchiya, T.; Terano, A.; Ishigaki, T.; Tsuchiya, T.; Tsuchiya, R.; Nakamura, T.

• Book ID: 114620897
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 847 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2012.2185241