High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

✍ Scribed by Saito, W.; Kuraguchi, M.; Takada, Y.; Tsuda, K.; Omura, I.; Ogura, T.

• Book ID: 118698606
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 623 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2004.836799