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Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

✍ Scribed by Kiefer, R. ;Quay, R. ;Müller, S. ;Feltgen, T. ;Raynor, B. ;Schleife, J. ;Köhler, K. ;Massler, H. ;Ramberger, S. ;van Raay, F. ;Tessmann, A. ;Mikulla, M. ;Weimann, G.

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
152 KB
Volume
200
Category
Article
ISSN
0031-8965

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Fabrication and nonlinear characterizati
Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications
✍ V. Camarchia; S. Donati Guerrieri; M. Pirola; V. Teppati; A. Ferrero; G. Ghione; 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 329 KB

In this work, we present the characterization results for several HEMT GaNbased devices developed by SELEX Sistemi Integrati. Due to the wide band-gap properties of this material, these devices are very well-suited for high-power applications, and must be characterized under strongly nonlinear and h