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High-aspect-ratio silicon dioxide pillars

✍ Scribed by Trifonov, T. ;Rodríguez, A. ;Servera, F. ;Marsal, L. F. ;Pallarès, J. ;Alcubilla, R.


Book ID
105363170
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
245 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

This paper presents a technique for fabricating high‐aspect‐ratio silicon dioxide pillars by electrochemical etching of n‐type silicon in hydrofluoric acid (HF) solutions. Basic process flow and etching conditions are described, which make it possible to obtain high‐aspect‐ratio pillar arrays with good uniformity. Pillar arrays of different dimensions (i.e. diameter and separation) and of different arrangements can be produced in a single etch step on the same wafer. The large surface area makes these pillar arrays possible candidates for applications in biological sensing. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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