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Black silicon with high density and high aspect ratio nanowhiskers

✍ Scribed by Kalem, S; Werner, P; Arthursson, Ö; Talalaev, V; Nilsson, B; Hagberg, M; Frederiksen, H; Södervall, U

Book ID
115464007
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
959 KB
Volume
22
Category
Article
ISSN
0957-4484

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High-aspect-ratio silicon dioxide pillar
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## Abstract This paper presents a technique for fabricating high‐aspect‐ratio silicon dioxide pillars by electrochemical etching of n‐type silicon in hydrofluoric acid (HF) solutions. Basic process flow and etching conditions are described, which make it possible to obtain high‐aspect‐ratio pillar