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Surface roughness and electron backscattering in high aspect ratio silicon nanowires

✍ Scribed by G. Pennelli; M. Totaro; P. Bruschi


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
478 KB
Volume
88
Category
Article
ISSN
0167-9317

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## Abstract Metal‐assisted etching is used in conjunction with block‐copolymer lithography to create ordered and densely‐packed arrays of high‐aspect‐ratio single‐crystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19 nm and 10 nm, res