Pulsed electron beam for silicon anneali
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G Leggieri; A Luches; V Nassisi; A Perrone; MR Perrone; G Majni; F Nava
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Article
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1982
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Elsevier Science
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English
β 205 KB
The characteristics of an electron beam generator are given. It produces pulses up to 50 kV. currents up to 20 kA, with a pulse length of about 50 ns. It was designed and built for annealing of thin metal layers deposited on single crystal silicon wafers.