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Hexagonal silicon formation by pulsed laser beam annealing

✍ Scribed by Jin Hyeok Kim; Jeong Yong Lee


Book ID
119125732
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
519 KB
Volume
27
Category
Article
ISSN
0167-577X

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πŸ“œ SIMILAR VOLUMES


Pulsed electron beam for silicon anneali
✍ G Leggieri; A Luches; V Nassisi; A Perrone; MR Perrone; G Majni; F Nava πŸ“‚ Article πŸ“… 1982 πŸ› Elsevier Science 🌐 English βš– 205 KB

The characteristics of an electron beam generator are given. It produces pulses up to 50 kV. currents up to 20 kA, with a pulse length of about 50 ns. It was designed and built for annealing of thin metal layers deposited on single crystal silicon wafers.