๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Silicon epitaxy by pulsed laser annealing of evaporated amorphous films

โœ Scribed by D. Hoonhout; C.B. Kerkdijk; F.W. Saris

Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
139 KB
Volume
66
Category
Article
ISSN
0375-9601

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Laser annealing study of PECVD deposited
Laser annealing study of PECVD deposited hydrogenated amorphous silicon carbon alloy films
โœ U. Coscia; G. Ambrosone; F. Gesuele; V. Grossi; V. Parisi; S. Schutzmann; D.K. B ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 524 KB

The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well

Epitaxial growth of diamond-like films o
Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite
โœ J.A. Martin-Gago; L. Vazquez; P. Bernard; S. Ferrer; F. Comin ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 254 KB

Carbon films of few atomic layers in thickness were grown on Si(100) substrates in an ultrahigh vacuum environment by pulsed-laser evaporation of graphite targets. Auger studies of the growth shows it to be layer by layer. It was found that the first two layers deposited, which wet the silicon surfa