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Pulsed electron beam for silicon annealing

โœ Scribed by G Leggieri; A Luches; V Nassisi; A Perrone; MR Perrone; G Majni; F Nava

Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
205 KB
Volume
32
Category
Article
ISSN
0042-207X

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โœฆ Synopsis

The characteristics of an electron beam generator are given. It produces pulses up to 50 kV. currents up to 20 kA, with a pulse length of about 50 ns. It was designed and built for annealing of thin metal layers deposited on single crystal silicon wafers.

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๐Ÿ“‚ Article ๐Ÿ“… 1980 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 162 KB

width of the energy distribution curve, ranging from about 50 to 15 eV FWHM, is found to depend on the applied voltage VA and the length-to-diameter ratio (+ of the channel, and to vary with output current. The results can be explained in terms of the normalized field strength near the output end of