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Growth pressure dependence of residual strain and threading dislocations in the GaN layer

✍ Scribed by Sung-Nam Lee; J. K. Son; H. S. Paek; T. Sakong; W. Lee; K. H. Kim; S. S. Kim; Y. J. Lee; D. Y. Noh; E. Yoon; O. H. Nam; Y. Park


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
193 KB
Volume
1
Category
Article
ISSN
1862-6351

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Threading dislocation density reduction
✍ Bougrov, V. E. ;Odnoblyudov, M. A. ;Romanov, A. E. ;Lang, T. ;Konstantinov, O. V πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 216 KB

## Abstract A theoretical approach is proposed to reduce the density of threading dislocations (TDs) in (0001) oriented growth of GaN layers. The approach can be realized by repeated stages of growth surface roughening (stage I) and flattening (stage II). Fundamentals of the approach include the fo