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Growth of well-oriented AlxIn1−xN films by sputtering at low temperature

✍ Scribed by C.J. Dong; M. Xu; Q.Y. Chen; F.S. Liu; H.P. Zhou; Y. Wei; H.X. Ji


Book ID
116604726
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
298 KB
Volume
479
Category
Article
ISSN
0925-8388

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The growth of In x Ga 1 À x N layers on c-plane GaN (2 mm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N 2 as the carrier gas. X-ray CTR scatterings on In x Ga 1 À x N layer were measured at growth temperatures and a