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Low-temperature growth of InxGa1−xN films by radio-frequency magnetron sputtering

✍ Scribed by Wang, J.; Shi, X.J.; Zhu, J.


Book ID
118415778
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
883 KB
Volume
265
Category
Article
ISSN
0169-4332

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The growth of In x Ga 1 À x N layers on c-plane GaN (2 mm)/sapphire (0 0 0 1) substrates was carried out using the special growth system installed in an X-ray diffractometer using solely N 2 as the carrier gas. X-ray CTR scatterings on In x Ga 1 À x N layer were measured at growth temperatures and a