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Growth of silicon nitride films by bombarding amorphous silicon with N+ ions: MD simulation

✍ Scribed by F. Gou; M.A. Gleeson; A.W. Kleyn; R.W.E. van de Kruijs; A.E. Yakshin; F. Bijkerk


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
534 KB
Volume
267
Category
Article
ISSN
0168-583X

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✍ K JΓ€rrendahl; SA Smith; T Zheleva; RS Kern; RF Davis πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 403 KB

## Aluminum nitride thin films with very smooth surfaces have been grown by gas-source molecular beam epitaxy on 4H and 6H silicon carbide substrates. High purity ammonia was used as the nitrogen source in conjunction with Al evaporated from an effusion cell. Streaked reflection high energy electr