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Growth of Si and in double-doped dislocation-free conductive GaAs crystal by the LEC technique

โœ Scribed by Fujii, Takashi; Nakajima, Masato; Fukuda, Tsuguo


Book ID
123520399
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
542 KB
Volume
4
Category
Article
ISSN
0167-577X

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