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Growth of silicon-doped dislocation-free gaas crystals by the LEC technique for optical device applications

✍ Scribed by F. Orito; H. Okada; M. Nakajima; T. Fukuda; T. Kajimura

Book ID
112811659
Publisher
Springer US
Year
1986
Tongue
English
Weight
842 KB
Volume
15
Category
Article
ISSN
0361-5235

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