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Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method

✍ Scribed by J.L. Weyher; C. Frigeri; P.J. Van der Wel


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
811 KB
Volume
103
Category
Article
ISSN
0022-0248

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