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Growth of phosphorus-doped diamond using tertiarybutylphosphine and trimethylphosphine as dopant gases

✍ Scribed by Kato, Hiromitsu; Futako, Wataru; Yamasaki, Satoshi; Okushi, Hideyo


Book ID
123017398
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
130 KB
Volume
14
Category
Article
ISSN
0925-9635

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## Abstract Phosphorus‐doped diamond films were grown by plasma‐enhanced chemical vapor deposition using organophosphorus gases, tertiarybutylphosphine (TBP) and trimethylphosphine (TMP). The electronic properties are characterized based on secondary ion mass spectroscopy, Hall‐effect, and cathodol