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Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source

✍ Scribed by Kato, H.; Futako, W.; Yamasaki, S.; Okushi, H.

Book ID
122529527
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
504 KB
Volume
13
Category
Article
ISSN
0925-9635

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## Abstract Phosphorus‐doped diamond films were grown by plasma‐enhanced chemical vapor deposition using organophosphorus gases, tertiarybutylphosphine (TBP) and trimethylphosphine (TMP). The electronic properties are characterized based on secondary ion mass spectroscopy, Hall‐effect, and cathodol