Growth and characterization of phosphorus-doped diamond using organophosphorus gases

✍ Scribed by Kato, Hiromitsu ;Yamasaki, Satoshi ;Okushi, Hideyo

• Book ID: 105363527
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 253 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200561925

✦ Synopsis

Abstract

Phosphorus‐doped diamond films were grown by plasma‐enhanced chemical vapor deposition using organophosphorus gases, tertiarybutylphosphine (TBP) and trimethylphosphine (TMP). The electronic properties are characterized based on secondary ion mass spectroscopy, Hall‐effect, and cathodoluminescence measurements and compared with data deduced for samples which have been doped using PH~3~. The technical potential of P‐doping using TBP is discussed and the high potential of TBP and TMP as alternative P precursors for P‐doping of diamond is shown. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)