𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of InxGa1−xAs on GaAs (001) by molecular beam epitaxy

✍ Scribed by D.I. Westwood; D.A. Woolf; R.H. Williams

Book ID
107790269
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
1006 KB
Volume
98
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Raman scattering in InxGa1−xAs/GaAs supe
Raman scattering in InxGa1−xAs/GaAs superlattices grown by molecular beam epitaxy
✍ M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persi 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 395 KB

The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt