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MBE Growth of Strained InxGa1−xAs on GaAs(001)

✍ Scribed by Nemcsics, á. ;Olde, J. ;Geyer, M. ;Schnurpfeil, R. ;Manzke, R. ;Skibowski, M.

Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
615 KB
Volume
155
Category
Article
ISSN
0031-8965

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Step-Bunching Evidence in Strained InxGa
Step-Bunching Evidence in Strained InxGa1?xAs/GaAs Quantum Wells Grown on Vicinal (001) Substrates
✍ de Sales, F.V. ;Soler, M.A.G. ;Ugarte, D. ;Quivy, A.A. ;da Silva, S.W. ;Martini, 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 2 views

In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol