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Current controlled LPE growth of InxGa1-xAs on GaAs

✍ Scribed by A. Abul-Fadl; E.K. Stefanakos; W.J. Collis


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
358 KB
Volume
51
Category
Article
ISSN
0022-0248

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An LPE growth of thick InxGa1βˆ’xAs
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## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob