LPE-growth of InP on GaAs

✍ Scribed by Dr. B. Jacobs; Prof. Dr. E. Butter; B. Dobner

• Publisher: John Wiley and Sons
• Year: 1978
• Tongue: English
• Weight: 318 KB
• Volume: 13
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.19780130408

✦ Synopsis

Abstract

LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were observed in layers grown from Sn/InP‐melts. – The grown layers were characterized by means of etching and electron beam microprobe analysis.