✦ LIBER ✦

LPE growth and characterization of InP photodiodes

✍ Scribed by S.H. Groves; M.C. Plonko; C.A. Armiento; V. Diadiuk

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 530 KB
Volume: 64
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(83)90252-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Preparation and characterization of LPE

Preparation and characterization of LPE InP

✍ E. Kuphal 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 812 KB

LPE growth and characterization of InGaA

LPE growth and characterization of InGaAsP/InP multiquantum well epitaxial layers

✍ Yoichi Sasai; Mototsugu Ogura; Takao Kajiwara 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 662 KB

LPE-growth of InP on GaAs

✍ Dr. B. Jacobs; Prof. Dr. E. Butter; B. Dobner 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 318 KB

## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob

LPE growth of Cd-doped InP

✍ I. Umebu; P.N. Robson 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 416 KB

Current controlled LPE growth of InP

✍ A. Abul-Fadl; E.K. Stefanakos 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 648 KB

Growth of InP by infinite solution LPE

✍ D.E. Holmes; G.S. Kamath 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 706 KB