LPE-growth of InP on GaAs
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Dr. B. Jacobs; Prof. Dr. E. Butter; B. Dobner
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Article
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1978
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John Wiley and Sons
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English
β 318 KB
## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InPβmelts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob