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Effect of electric current on the LPE growth of InP

✍ Scribed by Chisato Takenaka; Kazuo Nakajima


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
481 KB
Volume
108
Category
Article
ISSN
0022-0248

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The performance enhancement of the semiconductor laser for 1.3Β΅m optical communications has been required. But lasing characteristics in the high-temperature operation are poor for the present InGaAsP/InP double-heterostructure (DH) lasers. As a means for solving it, 1.3Β΅m-wavelength InGaAs/InGaP DH