Effect of electric current on the LPE growth of InP
β Scribed by Chisato Takenaka; Kazuo Nakajima
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 481 KB
- Volume
- 108
- Category
- Article
- ISSN
- 0022-0248
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## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InPβmelts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob
The performance enhancement of the semiconductor laser for 1.3Β΅m optical communications has been required. But lasing characteristics in the high-temperature operation are poor for the present InGaAsP/InP double-heterostructure (DH) lasers. As a means for solving it, 1.3Β΅m-wavelength InGaAs/InGaP DH