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Growth phenomena and characteristics of strained InxGa1−xAs on GaAs

✍ Scribed by J. Pamulapati; P. Berger; K. Chang; J. Oh; Yi Chen; J. Singh; P. Bhattacharya; R. Gibala

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
442 KB
Volume
95
Category
Article
ISSN
0022-0248

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✍ de Sales, F.V. ;Soler, M.A.G. ;Ugarte, D. ;Quivy, A.A. ;da Silva, S.W. ;Martini, 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 2 views

In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol