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Growth of high quality Al0.48In0.52As/Ga0.47Inâ0.53As heterostructures using strain relaxed AlxGayIn1âxâyAs buffer layers on GaAs

✍ Scribed by Haupt, M.; KoÌhler, K.; Ganser, P.; Emminger, S.; MuÌller, S.; Rothemund, W.

No coin nor oath required. For personal study only.

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Growth of high quality Al0.48In0.52As/Ga0.47Inâ0.53As heterostructures using strain relaxed AlxGayIn1âxâyAs buffer layers on GaAs