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Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

✍ Scribed by D. A. Vinokurov; S. A. Zorina; V. A. Kapitonov; D. N. Nikolaev; A. L. Stankevich; V. V. Shamakhov; I. S. Tarasov

No coin nor oath required. For personal study only.

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