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Growth of Hafnium Dioxide Thin Films by MOCVD Using a New Series of Cyclopentadienyl Hafnium Compounds

✍ Scribed by G. Carta; N. El Habra; G. Rossetto; G. Torzo; L. Crociani; M. Natali; P. Zanella; G. Cavinato; V. Matterello; V. Rigato; S. Kaciulis; A. Mezzi

Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 433 KB
Volume: 13
Category: Article
ISSN: 0948-1907
DOI: 10.1002/cvde.200706596

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A new alkoxide precursor, Hf(mp) 4 [mp = 3-methyl-3-pentoxide, OC(CH 3 )(C 2 H 5 ) 2 ] has been employed in the atomic layer deposition (ALD) of HfO 2 thin films using water (H 2 O) as the oxygen source. The self-limiting ALD process via alternate surface reactions of Hf(mp) 4 and H 2 O is confirmed