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ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4.

✍ Scribed by Wontae Cho; Ki-Seok An; Taek-Mo Chung; Chang Gyoun Kim; Byung-Soo So; Yil-Hwan You; Jin-Ha Hwang; Donggeun Jung; Yunsoo Kim

Publisher: John Wiley and Sons
Year: 2007
Weight: 20 KB
Volume: 38
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.200705014

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✦ Synopsis

Abstract

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ALD of Hafnium Dioxide Thin Films Using

ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

✍ W. Cho; K.-S. An; T.-M. Chung; C. G. Kim; B.-S. So; Y.-H. You; J.-H. Hwang; D. J 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 332 KB

A new alkoxide precursor, Hf(mp) 4 [mp = 3-methyl-3-pentoxide, OC(CH 3 )(C 2 H 5 ) 2 ] has been employed in the atomic layer deposition (ALD) of HfO 2 thin films using water (H 2 O) as the oxygen source. The self-limiting ALD process via alternate surface reactions of Hf(mp) 4 and H 2 O is confirmed