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Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient

✍ Scribed by Zhou, Mingbin; Li, Zhenrong; Li, Jingsi; Fan, Shiji; Xu, Zhuo


Book ID
121566192
Publisher
Springer US
Year
2014
Tongue
English
Weight
689 KB
Volume
43
Category
Article
ISSN
0361-5235

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Growth of GaN crystals by Na flux LPE me
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## Abstract High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux m