Growth of GaN crystals by Na flux LPE method

✍ Scribed by Mori, Y. ;Kitaoka, Y. ;Imade, M. ;Kawamura, F. ;Miyoshi, N. ;Yoshimura, M. ;Sasaki, T.

• Book ID: 105365807
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 227 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983482

✦ Synopsis

Abstract

High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux method. The carbon doping into the solution and the forced induction of solution flow are effective to control them. We also present some attempts for improving the quality of seed substrate for fabrication of boule‐sized bulk GaN crystals.