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Growth of GaN single crystals by Ca3N2 flux

✍ Scribed by G. Wang; W.X. Yuan; J.K. Jian; H.Q. Bao; J.F. Wang; X.L. Chen; J.K. Liang

Book ID: 113896983
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 337 KB
Volume: 58
Category: Article
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2007.09.027

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## Abstract High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux m