Growth of GaN crystals by Na flux LPE me
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Mori, Y. ;Kitaoka, Y. ;Imade, M. ;Kawamura, F. ;Miyoshi, N. ;Yoshimura, M. ;Sasa
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Article
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2010
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John Wiley and Sons
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English
β 227 KB
## Abstract Highβquality and lowβcost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux m