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The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

✍ Scribed by Masanori Morishita; Fumio Kawamura; Minoru Kawahara; Masashi Yoshimura; Yusuke Mori; Takatomo Sasaki


Book ID
108165894
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
417 KB
Volume
270
Category
Article
ISSN
0022-0248

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Growth of GaN crystals by Na flux LPE me
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## Abstract High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux m