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Conditions for seeded growth of GaN crystals by the Na flux method

✍ Scribed by Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J DiSalvo

Book ID
117356911
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
214 KB
Volume
56
Category
Article
ISSN
0167-577X

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## Abstract High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux m