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Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method

✍ Scribed by Murakami, Kousuke; Matsuo, Daisuke; Imabayashi, Hiroki; Takazawa, Hideo; Todoroki, Yuma; Kitamoto, Akira; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

Book ID
126033771
Publisher
Institute of Pure and Applied Physics
Year
2013
Tongue
English
Weight
536 KB
Volume
52
Category
Article
ISSN
0021-4922

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## Abstract High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux m