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Growth of bulk GaN crystal by Na flux method under various conditions

✍ Scribed by Y. Mori; M. Imade; K. Murakami; H. Takazawa; H. Imabayashi; Y. Todoroki; K. Kitamoto; M. Maruyama; M. Yoshimura; Y. Kitaoka; T. Sasaki

Book ID
116630157
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
401 KB
Volume
350
Category
Article
ISSN
0022-0248

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Growth of GaN crystals by Na flux LPE me
Growth of GaN crystals by Na flux LPE method
✍ Mori, Y. ;Kitaoka, Y. ;Imade, M. ;Kawamura, F. ;Miyoshi, N. ;Yoshimura, M. ;Sasa πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 227 KB

## Abstract High‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux m