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Growth of epitaxial layers of

✍ Scribed by Sebastian, I.; Heiler, M.; Meinel, K.; Neddermeyer, H.


Book ID
113035312
Publisher
Springer
Year
1998
Tongue
English
Weight
366 KB
Volume
66
Category
Article
ISSN
1432-0630

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Growth of Epitaxial Layers of GaN from G
✍ J. Ε»ytecki; Dr. R. Łappa πŸ“‚ Article πŸ“… 1974 πŸ› John Wiley and Sons 🌐 English βš– 268 KB πŸ‘ 1 views

## Abstract A method of obtaining GaN from GaBr~3~ Β· 4 NH~3~ by radiation heating of the substrate is described. The results of investigations are given concerning the growth rate of polycrystalline GaN layers on [111] oriented silicon substrates in dependence on the changes of the temperature of r