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Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2

✍ Scribed by G. A. Aleksandrova; I. V. Ivonin; L. M. Krasil'nikova; L. G. Lavrent'eva; P. B. Paschenko; A. E. Shubin

No coin nor oath required. For personal study only.

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