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Influence of crystallization temperature on growth rate of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2

✍ Scribed by L. G. Lavrent'eva; V. G. Ivanov; I. V. Ivonin; V. A. Moskovkin; S. E. Toropov

No coin nor oath required. For personal study only.

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