A thermodynamic factor influencing the growth rate and purity of epitaxial layers in the Ga-AsCl3-H2 system
β Scribed by Kenji Morizane; Yoshifumi Mori
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 557 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
## Abstract For reactions taking place between the species Ga, As~2~, As~4~, AsH~3~, and H~2~, the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate
## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system SiβCβHβCl in the temperature interval 1000β3000 K. The equilibrium pressures of the components in the system SiβCβHβCl with taking account the formation of the condense