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Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors.

โœ Scribed by Yee Wee Koh; Chian Sing Lai; An Yan Du; Edward R. T. Tiekink; Kian Ping Loh


Publisher
John Wiley and Sons
Year
2004
Weight
113 KB
Volume
35
Category
Article
ISSN
0931-7597

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Low-Temperature Growth of Well-Aligned ฮฒ
โœ K.-W. Chang; J.-J. Wu ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 413 KB ๐Ÿ‘ 1 views

**The growth of wellโ€aligned Ga**~**2**~**O**~**3**~ **nanowires at low temperature** (550โ€‰ยฐC) is reported (see Figure). A singleโ€source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vaporโ€“liquidโ€“solid route. Structural characterization by Xโ€ra